savantic semiconductor product specification silicon npn power transistors 2SC2292 d escription with to-3 package high speed ,high voltage applications for high speed ,high voltage switching and dc-dc converter application pinning (see fig.2) pin description 1 base 2 emitter 3 collector maximun ratings symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a p t total power dissipation t mb . 25 80 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2292 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 0.8 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =4a ; v ce =2v 15
savantic semiconductor product specification 3 silicon npn power transistors 2SC2292 package outline fig.2 outline dimensions
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